IRG4BC10S |
RFQ for IRG4BC10S Required Field |
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| Technical/Catalog Information | IRG4BC10S |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 14A |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 8A |
| Power - Max | 38W |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 (Straight Leads) |
| Packaging | Tube |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRG4BC10S IRG4BC10S |
| Product | Manufacturers | Pack | D/C | ||||||||||
| IRG4BC10S | - | TO-220 | 05+ |
Features |
| • Extremely low voltage drop; 1.1V typical at 2A• S-Speed: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in Chopper Applications• Very Tight Vce(on) distribution• Industry standard TO-220AB package |
| Parameter | Max. | Units | |
| VCES | Collector-to-Emitter Voltage | 600 | V |
| IC @ TC = 25 | Continuous Collector Current | 14 | A mJ |
| IC @ TC = 100 | Continuous Collector Current | 8.0 | |
| ICM | Pulsed Collector Current | 18 | |
| ILM | Clamped Inductive Load Current | 18 | |
| VGE | Gate-to-Emitter Voltage | ±20 | |
| VGEV | Reverse Voltage Avalanche Energy | 110 | |
| PD @ TC = 25 | Maximum Power Dissipation | 38 | |
| PD @ TC = 100 | Maximum Power Dissipation | 15 | |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to +150 | W |
| Soldering Temperature, for 10 sec. | 300 (0.063 in. (1.6mm) from case) | ||
| Mounting Torque, 6-32 or M3 Screw. | 10 lbf•in (1.1 N•m) |
